Microcrystalline Silicon based TFTs and Resistors for Reliable Flexible Electronics

被引：2

作者：

Kervran, Y. ^{[1
]}

Kandoussi, K. ^{[1
]}

Dong, H. ^{[1
]}

Janfaoui, S. ^{[1
]}

Coulon, N. ^{[1
]}

Simon, C. ^{[1
]}

Jacques, E. ^{[1
]}

Mohammed-Brahim, T. ^{[1
]}

机构：

[1] Univ Rennes 1, CNRS, DMM IETR, UMR 6164, Bat 11B,Campus Beaulieu, F-35042 Rennes, France

来源：

THIN FILM TRANSISTORS 13 (TFT 13) | 2016年 / 75卷 / 10期

关键词：

THIN-FILM TRANSISTORS; STRAIN; SENSOR;

D O I：

10.1149/07510.0013ecst

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon based flexible electronics is shown here as the right way when considering the reproducibility of the process and the long-term reliability, the only way leading to commercially available products. Microcrystalline silicon films are deposited directly on plastic substrates (PEN and Polyimide) at low temperature. Films are highly crystallized. Crystalline volume is higher than 73% for 50nm thick film as calculated from Raman spectra. Resistances and TFTs based on such silicon film are bent at lower radius than 1 mm without breaking. More than 200 times of such extreme bending are done without changing the TFT's characteristics

引用

页码：13 / 25

页数：13

共 16 条

[1] Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon
Alpuim, P.
Filonovich, S. A.
Costa, C. M.
Rocha, P. F.
Vasilevskiy, M. I.
Lanceros-Mendez, S.
Frias, C.
Marques, A. Torres
Soares, R.
Costa, C.
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2585 - 2589
[2] PIEZORESISTANCE IN POLYSILICON AND ITS APPLICATIONS TO STRAIN-GAUGES
FRENCH, PJ
EVANS, AGR
[J]. SOLID-STATE ELECTRONICS, 1989, 32 (01) : 1 - 10
[3] Failure resistance of amorphous silicon transistors under extreme in-plane strain
Gleskova, H
Wagner, S
Suo, Z
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (19) : 3011 - 3013
[4] Field-effect mobility of amorphous silicon thin-film transistors under strain
Gleskova, H
Hsu, PI
Xi, Z
Sturm, JC
Suo, Z
Wagner, S
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 732 - 735
[5] Electrical response of amorphous silicon thin-film transistors under mechanical strain
Gleskova, H
Wagner, S
Soboyejo, W
Suo, Z
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) : 6224 - 6229
[6] Ultraflexible amorphous silicon transistors made with a resilient insulator
Han, Lin
Song, Katherine
Mandlik, Prashant
Wagner, Sigurd
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (04)
[7] Harrop P., 2015, IDTECHEX REPORT
[8] Hayward, 2015, IDTECHEX REPORT
[9] Behavior of the parameters of microcrystalline silicon TFTs under mechanical strain
Janfaoui, S.
Simon, C.
Coulon, N.
Mohammed-Brahim, T.
[J]. SOLID-STATE ELECTRONICS, 2014, 93 : 1 - 7
[10] Undoped and arsenic-doped low temperature (∼165 °C) microcrystalline silicon for electronic devices process
Kandoussi, K.
Simon, C.
Coulon, N.
Mohammed-Brahim, T.
Moreac, A.
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 968 - 971

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