Energy level engineering of coupled InAs quantum dot structures

被引：0

作者：

Kim, J. S. ^{[1
]}

Kim, E. K. ^{[1
]}

Jeong, W. G. ^{[1
]}

Kim, S. S.

Cheong, H. M. ^{[1
]}

Han, I. K.

机构：

[1] Hanyang Univ, Dept Phys, Seoul 133791, South Korea

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

deep level transient spectroscopy; vertical coupling; quantum dots; energy level; InGaAs/InGaAsP/InP;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence, capacitance-voltage (C-V), and deep-level transient spectroscopy (DLTS) measurements were performed to investigate the optical and electrical properties of the vertically coupled lnGaAs/lnGaAsP/InP quantum dot (QD) system depending in an electric field. Two groups of activation energies, 0.36 similar to 0.37 eV and 0.41 similar to 0.44 eV for small and large QDs, appear in coupled QD samples by varying with the applied electric field. From the results, the quantum energy states of nearby QDs appear to couple and decouple as the gate bias conditions vary.

引用

页码：825 / +

页数：2

共 6 条

[1]

JACAK L, 1998, QUANTUM DOTS, P1

[2] Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications [J].