Formation of aluminum Schottky contact on plasma-treated cadmium telluride surface

被引:34
作者
Toyama, H
Nishihira, A
Yamazato, M
Higa, A
Maehama, T
Ohno, R
Toguchi, M
机构
[1] Univ Ryukyus, Fac Engn, Nishihara, Okinawa 9030213, Japan
[2] Acrorad Co Ltd, Okinawa 9042234, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 9A期
关键词
CdTe; plasma treatment; Al Schottky contact; stoichiometric surface; polarization;
D O I
10.1143/JJAP.43.6371
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the effect of plasma treatment on the rectification property and performance of the CdTe radiation detector with the Al Schottky electrode. The Te-rich layer on the CdTe surface etched with Br-methanol caused the degradation of the rectification property of the Al/CdTe Schottky contact. To remove the Te-rich layer, plasma treatment was carried out. The plasma treatment did not roughen the CdTe surface, and it removed the Te-rich layer. In terms of current-voltage characteristics of the Al/CdTe Schottky contact, the leakage current of the samples with plasma treatment was lower than that of the samples without plasma treatment. Moreover, in terms of detector performance, the samples with plasma treatment showed a higher energy resolution than those without plasma treatment. We achieved a high energy resolution of 1.6 keV FWHM at 59.5 keV using the plasma-treated Al/CdTe/Pt detector, which is comparable to the value obtained using a conventional Schottky-type In/CdTe/Pt detector.
引用
收藏
页码:6371 / 6375
页数:5
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