Chemical vapour deposition of rhenium disulfide and rhenium-doped molybdenum disulfide thin films using single-source precursors

被引:46
作者
Al-Dulaimi, Naktal [1 ]
Lewis, David J. [1 ,2 ]
Zhong, Xiang Li [2 ]
Malik, M. Azad [2 ]
O'Brien, Paul [1 ,2 ]
机构
[1] Univ Manchester, Sch Chem, Oxford Rd, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Sch Mat, Oxford Rd, Manchester M13 9PL, Lancs, England
基金
英国工程与自然科学研究理事会;
关键词
TRANSPORT-PROPERTIES; HIGH-PERFORMANCE; LAYER MOS2; TECHNETIUM; NANOSHEETS; MONOLAYER; TRANSISTORS; HYDROGEN; STORAGE;
D O I
10.1039/c6tc00489j
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polycrystalline thin films of rhenium disulfide (ReS2) and the alloys Mo1-xRexS2 (0 <= x <= 0.06) have been deposited by aerosol-assisted chemical vapour deposition (AA-CVD) using [Re(mu-(SPr)-Pr-i)(3)(SiPr)(6)] (1) and [Mo(S2CNEt2)(4)] (2) in different molar ratios at 475 degrees C. The deposited films were characterised by p-XRD, SEM, and ICP-OE, Raman, and EDX spectroscopies. The p-XRD patterns of the films deposited from (1) correspond to ReS2 (x = 1) and those deposited from (2) matched to MoS2 (x = 0). Re-doping of up to 6% was achieved in MoS2 thin films by using different concentrations of precursor (1), the morphology of the doped films changed from lamellar for pure MoS2 to clusters at 6 mol% alloying with rhenium. The films are promising candidates as models for the incorporation of technetium into transition metal dichalcogenides as a means of immobilisation in nuclear waste processing. Exfoliation of these films is also a potential route towards modification of the optoelectronic properties of 2D molybdenite.
引用
收藏
页码:2312 / 2318
页数:7
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