Electron-hole coherence and charging effects in ultrasmall metallic grains

被引:7
|
作者
Drewes, S [1 ]
Renn, SR
Guinea, F
机构
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[2] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
关键词
D O I
10.1103/PhysRevLett.80.1046
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We consider a model for electron tunneling between a pair of ultrasmall metallic grains. Under appropriate circumstances, nonequilibrium final state effects can strongly enhance tunneling and produce electron-hole coherence between the grains. The model displays a quantum phase transition between a Coulomb blockaded state to a coherent state exhibiting sub-Ohmic tunneling conductance. The critical state of the junction exhibits a temperature independent resistance of order h/e(2). Finally we discuss the similarities between the quantum transition in our model and the metal-insulator transition in granular wires observed by Herzog et al.
引用
收藏
页码:1046 / 1049
页数:4
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