193-nm development hampered by contamination

被引：0
|
作者：
不详
机构：
来源：
SOLID STATE TECHNOLOGY | 1998年 / 41卷 / 05期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：32 / +
页数：2
相关论文
共 50 条
  • [1] 193-NM RESIST DEVELOPMENT
    DUNN, PN
    SOLID STATE TECHNOLOGY, 1993, 36 (10) : 28 - 28
  • [2] Controlled contamination studies in 193-nm immersion lithography
    Liberman, V
    Palmacci, ST
    Hardy, DE
    Rothschild, M
    Grenville, A
    Optical Microlithography XVIII, Pts 1-3, 2005, 5754 : 148 - 153
  • [3] 193-nm lithography
    Rothschild, M
    Forte, AR
    Horn, MW
    Kunz, RR
    Palmateer, SC
    Sedlacek, JHC
    LASERS AS TOOLS FOR MANUFACTURING OF DURABLE GOODS AND MICROELECTRONICS, 1996, 2703 : 398 - 404
  • [4] 193-NM LITHOGRAPHY
    ROTHSCHILD, M
    FORTE, AR
    HORN, MW
    KUNZ, RR
    PALMATEER, SC
    SEDLACEK, JHC
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (03) : 916 - 923
  • [5] Novel fluorinated polymers for application in 193-nm lithography and 193-nm immersion lithography
    Yamashita, Tsuneo
    Ishikawa, Takuji
    Yoshida, Tomohiro
    Hayami, Takashi
    Aoyama, Hirokazu
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U783 - U795
  • [6] Development status of a 193-nm immersion exposure tool
    Chibana, Takahito
    Nakano, Hitoshi
    Hata, Hideo
    Kodachi, Nobuhiro
    Sano, Naoto
    Arakawa, Mikio
    Matsuoka, Yoichi
    Kawasaki, Youji
    Mori, Sunao
    Chiba, Keiko
    OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, 2006, 6154 : U1120 - U1128
  • [7] ISI ships first stepper for 193-nm development
    不详
    SOLID STATE TECHNOLOGY, 1996, 39 (05) : 46 - 46
  • [8] Development of 193-nm wet BARCs for implant applications
    Meador, Jim
    Beaman, Carol
    Lowes, Joyce
    Washburn, Carlton
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U1102 - U1111
  • [9] Potential of 193-nm photoresists
    Allen, Robert D.
    Opitz, Juliann
    Larson, Carl E.
    Wallow, Thomas I.
    Hofer, Donald C.
    Microlithography World, 8 (01):
  • [10] The 193-nm photodissociation of NCO
    Gómez, S
    Lambert, HM
    Houston, PL
    JOURNAL OF PHYSICAL CHEMISTRY A, 2001, 105 (26): : 6342 - 6352
12345