Is the liquid phase a viable approach for bulk growth of 3C-SiC?

被引：5

作者：

Mercier, F. ^{[1
]}

Kim-Hak, O. ^{[2
]}

Lorenzzi, J. ^{[2
]}

Dedulle, J-M. ^{[1
]}

Ferro, G. ^{[2
]}

Chaussende, D. ^{[1
]}

机构：

[1] Grenoble INP Minatec, CNRS, UMR 5628, Lab Mat & Genie Phys, BP 257, F-38016 Grenoble 01, France

[2] UCB Lyon 1, CNRS, UMR 5615, Lab Multimat Interfaces, F-69622 Villeurbanne, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

3C-SiC; bulk; modeling; solution growth; VLS; SINGLE-CRYSTALS;

D O I：

10.4028/www.scientific.net/MSF.645-648.67

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Despite outstanding properties, the development of 3C-SiC electronics is still suffering from the lack of bulk 3C-SiC substrates. Up to now, there is no real seed and optimized growth processes for this material. We address in this work the bulk growth of 3C-SiC by a two-step-liquid phase approach. By coupling experiments with global process simulation, we address the problems that must be overcome to consider the solution growth technique as a possible approach for the growth of bulk 3C-SiC.

引用

页码：67 / +

页数：2

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