Band alignment in ZnCdTe/ZnTe and ZnCdSe/ZnSe SQW structures grown on GaAs(100) by MBE

Molecular-beam-epitaxy-grown ZnTe/CdZnTe/ZnTe and ZnSe/ZnCdSe/ZnSe strained single-quantum-well structures with non-doping layers were investigated by cathodoluminescence (CL) and deep-level transient spectroscopy (DLTS). The activation energies for deep levels in ZnTe and ZnSe buffer layers grown on GaAs were determined by the DLTS spectra. Moreover, an additional DLTS peak that depends on the quantum well (QW) parameters and col relates with the QW emission line position in the CL spectra was observed. This peak is interpreted as an emission of electrons from a ground level in the QW. Obtained DLTS and CL results were used for the estimation of the conduction band offset parameter Q(c).