Oxidation of vanadium with reactive oxygen plasma: A photoelectron spectroscopy study of the initial stages of the oxide growth process

被引：11

作者：

Romanyuk, Andriy ^{[1
]}

Oelhafen, Peter ^{[1
]}

机构：

[1] Univ Basel, Inst Phys, CH-4056 Basel, Switzerland

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 16期

关键词：

vanadium oxide; oxidation; plasma processing and deposition; XPS;

D O I：

10.1016/j.tsf.2006.11.055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the oxidation of vanadium surface in a low-temperature oxygen plasma studied by in-situ photoelectron spectroscopy (XPS, UPS). Pure vanadium foil was exposed to the oxygen plasma for different time intervals allowing to investigate early stages of the oxide-metal interface formation process and the oxide film growth. Upon increasing the exposure time to the oxygen plasma we identify two regimes with respect to the vanadium oxidation state: formation of 4+ state on the early stages of growth and in saturated regime vanadium was found to be predominantly in the 5+ oxidation state. Angle-resolved XPS was used to perform an in-depth distribution analysis of chemical composition in outermost layers of the oxide. We found that plasma oxidation produces a well-pronounced interface with a transition layer thickness of about 1.3 nm. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：6544 / 6547

页数：4

共 20 条

[1] CRYSTALLOGRAPHIC TRANSITION IN CONVENTIONAL BRONZE AND ANOMALOUS BLUE VO2 THIN-FILMS [J].