Mixed-dimensional CsPbBr3@ZnO heterostructures for high-performance p-n diodes and photodetectors

被引：45

作者：

Liu, Jia ^{[1
,3
]}

Liu, Fengjing ^{[2
,3
]}

Liu, Haining ^{[2
,3
]}

Yue, Junyi ^{[1
,3
]}

Jin, Jiyou ^{[1
,3
]}

Impundu, Julienne ^{[1
,3
]}

Liu, Hui ^{[1
,3
]}

Yang, Zhu ^{[1
]}

Peng, Zhisheng ^{[1
,3
]}

Wei, Haonan ^{[1
]}

Jiang, Chao ^{[2
]}

Li, Yong Jun ^{[1
,3
,4
]}

Xie, Liming ^{[2
]}

Sun, Lianfeng ^{[1
,3
,4
]}

机构：

[1] CAS Ctr Excellence Nanosci, Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China

[2] CAS Ctr Excellence Nanosci, Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] GBA Res Innovat Inst Nanotechnol, Guangzhou 510700, Guangdong, Peoples R China

来源：

NANO TODAY | 2021年 / 36卷

基金：

中国国家自然科学基金;

关键词：

Metal halide perovskites; Zinc oxides; Heterojunctions; P-n diodes; Photodetectors; FIELD-EFFECT TRANSISTORS; PEROVSKITE; HETEROJUNCTION;

D O I：

10.1016/j.nantod.2020.101055

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Mixed one-dimensional (1D) and three-dimensional (3D) heterostructures, with synergistic advantages of different dimensionalities, have shown unique optical properties due to their large junction areas and high absorption cross-sections, which may also bring superior electrical and optoelectronic performances. However, due to the challenge in designing and constructing a proper 1D-3D p-n junction, their electronic properties and potential application are still unclear. Here, a type of 1D-3D ZnO/CsPbBr3 p-n junction is constructed by liquid-phase growth of crystalline CsPbBr3 microplates on ZnO nanowires, which exhibit excellent properties of p-n diode and serve as high-performance rectifier and photodetector. As a rectifier, it shows characteristics of ambipolar transfer and its rectification ratio reaches up to 10(6). As a photodetector, it covers light from ultraviolet to visible light. High photoelectric switching ratio (10(7)), responsivity (3.5 x 10(3) A/W), detectivity (6.6 x 10(13) Jones) and external quantum efficiency (1.7 x 10(6)%) are obtained under 254 nm light illumination. Meanwhile, the switching ratio, responsivity, detectivity and external quantum efficiency are 10(3), 41.5 A/W, 4.96 x 10(12) Jones and 1.086 x 10(3)%, respectively, under 473 nm laser illumination. The decay length of photo-generated carriers in ZnO/CsPbBr3 heterojunction is demonstrated longer than that in original CsPbBr3 crystal, which is further controlled by adjusting the potential barriers between the CsPbBr3 and ZnO with a tunable external electric field. (C) 2020 Elsevier Ltd. All rights reserved.

引用

页数：8

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