Conductivity and persistent photoconductivity in GaAs epitaxial films containing single and double delta-doped layers

被引：4

作者：

Valyaev, VV ^{[1
]}

Gurtovoi, VL ^{[1
]}

Ivanov, DY ^{[1
]}

Morozov, SV ^{[1
]}

Sirotkin, VV ^{[1
]}

Dubrovskii, YV ^{[1
]}

Shapoval, SY ^{[1
]}

Khanin, YN ^{[1
]}

Vdovin, EE ^{[1
]}

Pustovit, AN ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Problems Microelect & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia

来源：

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 1998年 / 86卷 / 02期

关键词：

D O I：

10.1134/1.558440

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrophysical parameters of single and double delta-doped layers in GaAs epitaxial films grown by the metal-organic chemical vapor deposition have been systematically investigated in the temperature range of 4.2 to 300 K. The 2D electron gas density distribution is affected by the overlap of wave functions in neighboring quantum wells, as a result of which the peak on the curve of the Hall mobility in the 2D electron gas versus the separation between the quantum wells shifts. The persistent photoconductivity in delta-doped layers is due to the change in the surface potential caused by the neutralization of the negative charge of surface states by photoexcited holes. A method for comparing delta-doped layers grown under different conditions at different depths from the sample surface has been suggested. (C) 1998 American Institute of Physics.

引用

页码：383 / 387

页数：5

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