High mobility nanocrystalline indium zinc oxide deposited at room temperature

In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5x10(-4) Omegacm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.