High mobility nanocrystalline indium zinc oxide deposited at room temperature

被引：0
|
作者：
Fortunato, E [1 ]
Pimentel, A [1 ]
Gonçalves, A [1 ]
Marques, A [1 ]
Martins, R [1 ]
机构：
[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal
来源：
INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS | 2004年 / 811卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present results of indium doped zinc oxide deposited at room temperature by rf magnetron sputtering, with electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5x10(-4) Omegacm with an optical transmittance of 85%. The structure of these films look-like polymorphous (mixed of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns (no clear peak exists) with a high smooth surface, as detected from SEM micrographs, highly important to ensure long life time when used in display devices.
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页码：437 / 442
页数：6
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