Sensitivity enhancement of chemically amplified EUV resists by adding acid-generating promoters

被引：15

作者：

Fujii, Shinya ^{[1
]}

Okamoto, Kazumasa ^{[1
,2
]}

Yamamoto, Hiroki ^{[2
]}

Kozawa, Takahiro ^{[2
]}

Itani, Toshiro ^{[3
]}

机构：

[1] Hokkaido Univ, Fac Grad Sch Engn, Inst Sci & Ind Res, Sapporo, Hokkaido 0608628, Japan

[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

[3] Inc EIDEC, Evolving Nanoproc Infrastruct Dev Ctr, Tsukuba, Ibaraki 3058569, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 06期

关键词：

RADICAL CATIONS; PHOTORESISTS; LITHOGRAPHY; PHOTOSENSITIVITY; AMPLIFICATION; RADIOLYSIS; CHALLENGES;

D O I：

10.7567/JJAP.56.06GD01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The trade-off relationship between sensitivity, resolution, and roughness is a serious problem in the development of extreme ultraviolet (EUV) resist materials. Increasing the acid-generation efficiency is an effective solution to this trade-off problem. Chemically amplified resists (CARs) remain important for EUV lithography because of their longstanding use in photolithography. In this study, the feasibility and mechanism of improving CAR performance by adding acid-generating promoters were investigated. It was confirmed that di-p-tolyl sulfone acts as both a deprotonation promoter and a recombination inhibitor, which enhances the acid-generation efficiency and improves the performance of CARs in lithographies using ionizing radiation such as EUV and electron beams. (C) 2017 The Japan Society of Applied Physics

引用

页数：6

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