BAND GAP ENERGY OF CHALCOPYRITE THIN FILM SOLAR CELL ABSORBERS DETERMINED BY SOFT X-RAY EMISSION AND ABSORPTION SPECTROSCOPY

被引：0

作者：

Bar, M. ^{[1
]}

Weinhardt, L. ^{[1
]}

Pookpanratana, S. ^{[1
]}

Heske, C. ^{[1
]}

Nishiwaki, S. ^{[2
]}

Shafarman, W. N. ^{[2
]}

Fuchs, O. ^{[3
]}

Blum, M. ^{[3
]}

Yang, W. ^{[4
]}

Denlinger, J. D. ^{[4
]}

机构：

[1] Univ Nevada, Dept Chem, 4505 Maryland Pkwy, Las Vegas, NV 89154 USA

[2] Univ Delaware, Inst Energy Convers IEC, Newark, DE 19716 USA

[3] Univ Wurzburg, Expt Phys II, D-97074 Wurzburg, Germany

[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USA

来源：

PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4 | 2008年

关键词：

ELECTRICAL-PROPERTIES; HETEROJUNCTION; CU(IN; GA)SE-2; ALIGNMENT; CUIN3SE5; CUGA5SE8; CUINSE2; IMPACT;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The chemical and electronic structure of high-efficiency chalcopyrite thin film solar cell absorbers significantly differs between the surface and the bulk. While it is widely accepted that the absorber surface exhibits a Cu-poor surface phase with increased band gap (E-g), a direct access to the crucial information of the depth-dependency of Eg is still missing. In this paper, we demonstrate that a combination of x-ray emission and absorption spectroscopy allows a determination of Eg in the surface-near bulk and thus complements the established surface- and bulk-sensitive techniques of Eg determination. As an example, we discuss the determination of Eg for a Cu(In,Ga)Se-2 absorber and find a value of (1.52 +/- 0.20) eV.

引用

页码：1523 / +

页数：2

共 35 条

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