BAND GAP ENERGY OF CHALCOPYRITE THIN FILM SOLAR CELL ABSORBERS DETERMINED BY SOFT X-RAY EMISSION AND ABSORPTION SPECTROSCOPY

被引：0
|
作者：
Bar, M. [1 ]
Weinhardt, L. [1 ]
Pookpanratana, S. [1 ]
Heske, C. [1 ]
Nishiwaki, S. [2 ]
Shafarman, W. N. [2 ]
Fuchs, O. [3 ]
Blum, M. [3 ]
Yang, W. [4 ]
Denlinger, J. D. [4 ]
机构：
[1] Univ Nevada, Dept Chem, 4505 Maryland Pkwy, Las Vegas, NV 89154 USA
[2] Univ Delaware, Inst Energy Convers IEC, Newark, DE 19716 USA
[3] Univ Wurzburg, Expt Phys II, D-97074 Wurzburg, Germany
[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source ALS, Berkeley, CA 94720 USA
来源：
PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4 | 2008年
关键词：
ELECTRICAL-PROPERTIES; HETEROJUNCTION; CU(IN; GA)SE-2; ALIGNMENT; CUIN3SE5; CUGA5SE8; CUINSE2; IMPACT;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The chemical and electronic structure of high-efficiency chalcopyrite thin film solar cell absorbers significantly differs between the surface and the bulk. While it is widely accepted that the absorber surface exhibits a Cu-poor surface phase with increased band gap (E-g), a direct access to the crucial information of the depth-dependency of Eg is still missing. In this paper, we demonstrate that a combination of x-ray emission and absorption spectroscopy allows a determination of Eg in the surface-near bulk and thus complements the established surface- and bulk-sensitive techniques of Eg determination. As an example, we discuss the determination of Eg for a Cu(In,Ga)Se-2 absorber and find a value of (1.52 +/- 0.20) eV.
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收藏
页码：1523 / +
页数：2
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