Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity

被引:25
作者
Wang, YL
Liu, C
Chang, ST
Tsai, MS
Feng, MS
Tseng, WT
机构
[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[2] Phoenix Silicon Int Corp, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Inst Mat Sci & Engn, Hsinchu 300, Taiwan
[4] Natl Nano Device Labs, Hsinchu 300, Taiwan
关键词
spin-on-glass; chemical-mechanical polishing; zirconia oxide; slurry;
D O I
10.1016/S0040-6090(97)00491-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Alkyl siloxane-based low-dielectric-constant (low-k) spin-on-glass (SOG) thin films with varying amounts of organic content were subjected to polishing experiments using silica-and ZrO2-based slurries with a variety of additives, As the amount of organic content in SOG increases, the chemical-mechanical polishing (CMP) removal rate decreases with silica-based potassium hydroxide-added slurry. On the other hand, zirconia-based slurry resulted in higher removal rates for both SOG (>400 nm/min) and thermal oxide and an adjustment in polish selectivity (related to thermal oxide) ranging from 1.2 to 9.1 can be achieved by adding various amounts of tetra-alkyl substituted ammonium hydroxide. Post-CMP materials characterization by Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) shows the chemical stability and CMP compatibility of SOG thin films. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:550 / 554
页数:5
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