Millimeter-Wave and Terahertz Magnetic Field Tunable Avalanche Transit Time Sources

被引：0

作者：

Banerjee, Partha ^{[1
]}

Acharyya, Aritra ^{[2
]}

Biswas, Arindam ^{[3
]}

Bhattacharjee, A. K. ^{[4
]}

机构：

[1] Acad Technol, Dept ECE, Hooghly 712121, W Bengal, India

[2] Cooch Behar Govt Engn Coll, Dept ECE, Cooch Behar 736170, W Bengal, India

[3] Asansol Engn Coll, Dept ECE, Asansol 713305, W Bengal, India

[4] Natl Inst Technol, Dept ECE, Durgapur 713209, W Bengal, India

来源：

PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES KOLKATA CONFERENCE (IEEE EDKCON) | 2018年

关键词：

atmospheric window frequency; MAGTATT; sensitivity; THz; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of static, high frequency and noise characteristics of Silicon based magnetic field tunable avalanche transit time (MAGTATT) sources operating at millimeter-wave atmospheric window frequencies (94, 140 and 220 GHz) and two different terahertz (THz) frequencies (0.3 and 0.5 THz) have been investigated in this paper. Comprehensive two-dimensional simulation models developed by the authors for evaluating static, large-signal and noise characteristics of MATATT diodes have been used for this purpose. The simulation results show that the above-mentioned magnetic field sensitivities are considerably reduced as the operating frequency increases.

引用

页码：42 / 45

页数：4

共 12 条

[1] Large-signal characterization of DDR silicon IMPATTs operating up to 0.5 THz [J].

Acharyya, Aritra ;

Chakraborty, Jit ;

Das, Kausik ;

Datta, Subir ;

De, Pritam ;

Banerjee, Suranjana ;

Banerjee, J. P. .

INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2013, 5 (05) :567-578

[2] TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF A SILICON MAGNETIC-FIELD SENSOR [J].

BALTES, HP ;

ANDOR, L ;

NATHAN, A ;

SCHMIDTWEINMAR, HG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) :996-999

[3]

Banerjea, 1916, P 4 GRID FUT S CIGRE, P1, DOI DOI 10.1109/ICCECE.2016.8009570

[4] Effect of magnetic field on the RF performance of millimeter-wave IMPATT source [J].

Banerjee, Partha ;

Acharyya, Aritra ;

Biswas, Arindam ;

Bhattacharjee, A. K. .

JOURNAL OF COMPUTATIONAL ELECTRONICS, 2016, 15 (01) :210-221

[5] DRIFT VELOCITY OF ELECTRONS AND HOLES AND ASSOCIATED ANISOTROPIC EFFECTS IN SILICON [J].

CANALI, C ;

OTTAVIANI, G ;

ALBERIGI.A .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) :1707-+

[6] MAGNETICALLY TUNABLE MICROSTRIP IMPATT OSCILLATOR [J].

GLANCE, B .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (06) :425-426

[7]

Grant W.N., ELECT ARCH NEW SEMIC

[8] ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J].

GRANT, WN .

SOLID-STATE ELECTRONICS, 1973, 16 (10) :1189-1203

[9]

Hartnagel H. L., 1975, PHYS STATUS SOLIDI A, V3

[10] MAGNETODIODE MODEL [J].

PFLEIDERER, H .

SOLID-STATE ELECTRONICS, 1972, 15 (03) :335-+

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