Processing and evaluation of metal gate/high-κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-κ dielectric

被引：9

作者：

Abermann, S. ^{[1
]}

Efavi, J. K.

Sjoblom, G.

Lemme, M. C.

Olsson, J.

Bertagnolli, E.

机构：

[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

[2] AMO GMBH, Adv Microelect Ctr, D-52074 Aachen, Germany

[3] Uppsala Univ, Angstrom Lab, SE-75121 Uppsala, Sweden

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 5-8期

关键词：

metal gate; high-kappa; ZrO2; HfO2; MOCVD; processing;

D O I：

10.1016/j.mee.2007.01.176

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We evaluate various metal gate/high-K/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1635 / 1638

页数：4

共 9 条

[1] Metal-organic chemical vapor deposition and nanoscale characterization of zirconium oxide thin films [J].

Harasek, S ;

Wanzenboeck, HD ;

Basnar, B ;

Smoliner, J ;

Brenner, J ;

Stoeri, H ;

Gornik, E ;

Bertagnolli, E .

THIN SOLID FILMS, 2002, 414 (02) :199-204

[2] Characterization of high-K dielectric ZrO2 films annealed by rapid thermal processing [J].

Hu, YZ ;

Tay, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (05) :1706-1714

[3]

*ITRS, INT ROADM SEM

[4] A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics [J].

Kwa, KSK ;

Chattopadhyay, S ;

Jankovic, ND ;

Olsen, SH ;

Driscoll, LS ;

O'Neill, AG .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (02) :82-87

[5] OXIDE-THICKNESS DETERMINATION IN THIN-INSULATOR MOS STRUCTURES [J].

RICCO, B ;

OLIVO, P ;

NGUYEN, TN ;

KUAN, TS ;

FERRIANI, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) :432-438

[6]

Sze S.M., 2013, SEMICONDUCTOR DEVICE

[7] High-κ gate dielectrics:: Current status and materials properties considerations [J].

Wilk, GD ;

Wallace, RM ;

Anthony, JM .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5243-5275

[8] HfO2/HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application [J].

Yang, CW ;

Fang, YK ;

Chen, SF ;

Wang, MF ;

Hou, TH ;

Lin, YM ;

Yao, LG ;

Chen, SC ;

Liang, MS .

ELECTRONICS LETTERS, 2003, 39 (08) :692-694

[9] Effects of high-κ gate dielectric materials on metal and silicon gate workfunctions [J].

Yeo, YC ;

Ranade, P ;

King, TJ ;

Hu, CM .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (06) :342-344

← 1 →