Photoluminescence of ZnO:Ga thin films fabricated by pulsed laser deposition technique

被引：54

作者：

Liu, ZF

Shan, FK

Sohn, JY

Kim, SC

Kim, GY

Li, YX

Yu, YS ^{[1
]}

机构：

[1] Dong Eui Univ, Elect Ceram Ctr, Pusan 614714, South Korea

[2] Dong Eui Univ, RIBS, Pusan 614714, South Korea

[3] Dong Eui Univ, Dept Phys, Pusan 614714, South Korea

[4] Dong Eui Univ, Dept Urban Engn, Pusan 614714, South Korea

[5] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

JOURNAL OF ELECTROCERAMICS | 2004年 / 13卷 / 1-3期

关键词：

Ga-doped ZnO; thin films; photoluminescence;

D O I：

10.1007/s10832-004-5096-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Highly c-axis oriented Ga-doped ZnO films (GZO) have been grown on sapphire (0001) substrates by pulsed laser deposition (PLD) method. Photoluminescence (PL) spectra indicate that Ga atoms have a large effect on the luminescent properties of ZnO films. PL spectra of GZO films show near band edge (NBE) emissions and broad orange deep-level emissions. The NBE emission shifts to higher energy region and the intensity decreases with the increase of Ga concentration. The blue shift of NBE emission results from Burstein-Moss effect. The quenching of NBE emission is ascribed to the noradiative recombination. The orange emission is related to the oxygen vacancies.

引用

页码：183 / 187

页数：5

共 23 条

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