Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

被引：166
作者：
Karrer, U [1 ]
Ambacher, O [1 ]
Stutzmann, M [1 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 13期
关键词：
D O I：
10.1063/1.1313275
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Si-doped epitaxial GaN layers with Ga- and N-face polarity were grown by plasma-induced molecular-beam epitaxy (PIMBE) in order to characterize the influence of polarity on the electrical properties of Pt Schottky diodes. Different barrier heights for Pt onto these two materials are obtained from the dependence of the effective barrier height versus ideality factor, determined by I-V measurements to be 1.1 and 0.9 eV for Ga- and N-face GaN, respectively. C-V measurements confirm the greater barrier heights for Ga-face material. A possible explanation for this behavior can be a different band bending of the conduction and valence band, inferred from the self-consistent solution of the Schrodinger-Poisson equation, including polarization-induced surface and interface charges, which result from the different spontaneous polarization in epitaxial layers with different polarity. (C) 2000 American Institute of Physics. [S0003-6951(00)04839-7].
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页码：2012 / 2014
页数：3
相关论文
共 17 条
  • [1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
    Ambacher, O
    Smart, J
    Shealy, JR
    Weimann, NG
    Chu, K
    Murphy, M
    Schaff, WJ
    Eastman, LF
    Dimitrov, R
    Wittmer, L
    Stutzmann, M
    Rieger, W
    Hilsenbeck, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) : 3222 - 3233
  • [2] Bernardini F, 1999, PHYS STATUS SOLIDI B, V216, P391, DOI 10.1002/(SICI)1521-3951(199911)216:1<391::AID-PSSB391>3.0.CO
  • [3] 2-K
  • [4] Spontaneous polarization and piezoelectric constants of III-V nitrides
    Bernardini, F
    Fiorentini, V
    Vanderbilt, D
    [J]. PHYSICAL REVIEW B, 1997, 56 (16): : 10024 - 10027
  • [5] Comparison of N-face and Ga-face AlGaN/GaN-based high electron mobility transistors grown by plasma-induced molecular beam epitaxy
    Dimitrov, R
    Mitchell, A
    Wittmer, L
    Ambacher, O
    Stutzmann, M
    Hilsenbeck, J
    Rieger, W
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A): : 4962 - 4968
  • [6] Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire
    Dimitrov, R
    Murphy, M
    Smart, J
    Schaff, W
    Shealy, JR
    Eastman, LF
    Ambacher, O
    Stutzmann, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) : 3375 - 3380
  • [7] STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    GUO, JD
    FENG, MS
    GUO, RJ
    PAN, FM
    CHANG, CY
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (18) : 2657 - 2659
  • [8] Near-ideal platinum-GaN Schottky diodes
    Mohammad, SN
    Fan, Z
    Botchkarev, AE
    Kim, W
    Aktas, O
    Salvador, A
    Morkoc, H
    [J]. ELECTRONICS LETTERS, 1996, 32 (06) : 598 - 599
  • [9] Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities
    Mönch, W
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04): : 1867 - 1876
  • [10] Semiconductor ultraviolet detectors
    Razeghi, M
    Rogalski, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7433 - 7473
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