Schottky Barrier Height Reduction at Interface Between GZO Transparent Electrode and InP/InGaAs Structure by Zinc Driven-in Step and Nickel Oxide Insertion

被引：2

作者：

Lee, Yueh-Lin ^{[1
]}

Ho, Chong-Long ^{[2
]}

Huang, Chi-Chen ^{[2
]}

Wu, Meng-Chyi ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Inst Photon Technol, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 12期

关键词：

Ga-doped ZnO (GZO); NiOx; RF-sputtering plasma-mode atomic layer deposition (PM-ALD); zinc driven-in step; ohmic contact; specific contact resistance; INDIUM TIN OXIDE; DEPOSITION;

D O I：

10.1109/LED.2014.2360926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report the characteristics of transparent Ga-doped ZnO (GZO) electrodes contacted to the InP/InGaAs epitaxial structure both with and without a NiOx inserting layer. The GZO films deposited onto the p-InP/InGaAs structure by both radio-frequency sputtering and plasma-mode atomic layer deposition always yield Schottky contact characteristics. The barrier height improvement at the n-GZO/p-InP interface is proposed using dual zinc driven-in steps and a NiOx insertion layer to realize ohmic characteristics. The high zinc concentration (5-8 x 10(18) cm(-3)) is first obtained in the surface of the p-InP window layer via the dual zinc driven-in steps. By inserting a NiOx layer between the GZO and Au/Cr contact films, the Au/Cr/GZO/NiOx contact pad for zinc driven-in p-InP window layer and the postannealing process of 430 degrees C for 180 s exhibits a good ohmic contact behavior and a low specific contact resistance of 3.07 x 10(-4) Omega cm(2).

引用

页码：1290 / 1292

页数：3

共 7 条

[1] High-Frequency Modulation of GaAs/AlGaAs LEDs Using Ga-Doped ZnO Current Spreading Layers [J].

Chen, Shang-Fu ;

Syu, He-Long ;

Huang, Chi-Chen ;

Lee, Yueh-Lin ;

Ho, Chong-Long ;

Wu, Meng-Chyi .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (01) :36-38

[2] IMPROVEMENTS IN THE ELECTRICAL-PROPERTIES OF INDIUM OXIDE P-INP AND INDIUM OXIDE N-GAAS HETEROSTRUCTURES FORMED AT LOW REACTION TEMPERATURES BY RAPID THERMAL ANNEALING [J].

EFTEKHARI, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (08) :1159-1162

[3]

Hseih C., 2012, P LAS EL OPT C CLEO, P1

[4] INDIUM TIN OXIDE ON INP BY PULSED-LASER DEPOSITION [J].

JIA, QX ;

ZHENG, JP ;

KWOK, HS ;

ANDERSON, WA .

THIN SOLID FILMS, 1995, 258 (1-2) :260-263

[5] Planar InGaAs p-i-n Photodiodes With Transparent-Conducting-Based Antireflection and Double-Path Reflector [J].

Lee, Yueh-Lin ;

Huang, Chi-Chen ;

Ho, Chong-Long ;

Wu, Meng-Chyi .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (11) :1406-1408

[6] The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition [J].

Lee, Yueh-Lin ;

Huang, Tzu-Hsuan ;

Ho, Chong-Lung ;

Wu, Meng-Chyi .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (09) :Q182-Q186

[7] THE INFLUENCE OF INDIUM TIN OXIDE DEPOSITION ON THE TRANSPORT-PROPERTIES AT INP JUNCTIONS [J].

LUO, JK ;

THOMAS, H .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (11) :1311-1316

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