Materials News: Interfacial chemistry and atomic arrangement of ZrO2-La2/3Sr1/3MnO3 pillar-matrix structures

被引：7

作者：

Zhou, Dan ^{[1
]}

Sigle, Wilfried ^{[1
]}

Okunishi, Eiji ^{[2
]}

Wang, Yi ^{[1
]}

Kelsch, Marion ^{[1
]}

Habermeier, Hanns-Ulrich ^{[3
]}

van Aken, Peter A. ^{[1
]}

机构：

[1] Max Planck Inst Intelligent Syst, Stuttgart Ctr Electron Microscopy, D-70569 Stuttgart, Germany

[2] JEOL Ltd, Tokyo 1968558, Japan

[3] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

来源：

APL MATERIALS | 2014年 / 2卷 / 12期

关键词：

CRYSTAL-STRUCTURE; TRANSITION; ZIRCONIA; ENERGY; STATE; FILMS; MN;

D O I：

10.1063/1.4904819

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We studied ZrO2-La2/3Sr1/3MnO3 pillar-matrix thin films which were found to show anomalous magnetic and electron transport properties. With the application of an aberration-corrected transmission electron microscope, interfacial chemistry, and atomic-arrangement of the system, especially of the pillar-matrix interface were revealed at atomic resolution. Minor amounts of Zr were found to occupy Mn positions within the matrix. The Zr concentration reaches a minimum near the pillar-matrix interface accompanied by oxygen vacancies. La and Mn diffusion into the pillar was revealed at atomic resolution and a concomitant change of the Mn valence state was observed. (C) 2014 Author(s).

引用

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