Epitaxy of half-metallic Heusler alloy Co2MnSi on Ge(111) substrate via a graphene interlayer with L21-ordered Co2MnS

被引：0

作者：

Li, Gui-fang ^{[1
]}

Du, Yongqian ^{[2
]}

You, Tao ^{[3
]}

Tan, Yue ^{[1
]}

Li, Gao-Qiang ^{[4
]}

Zhang, Yun ^{[1
]}

Liu, Shibin ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Sch Elect & Informat, 127 West Youyi Rd, Xian 710072, Shaanxi, Peoples R China

[2] Northwestern Polytech Univ Shenzhen, Res & Dev Inst, Shenzhen 518057, Guangdong, Peoples R China

[3] Northwestern Polytech Univ, Sch Comp Sci, 127 West Youyi Rd, Xian 710072, Shaanxi, Peoples R China

[4] Shannxi Normal Univ, Sch Chem & Chem Engn, 620 West Changan Ave, Xian 710119, Shaanxi, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2022年 / 120卷 / 16期

基金：

中国国家自然科学基金;

关键词：

SPIN TRANSPORT; MAGNETORESISTANCE; MAGNETIZATION;

D O I：

10.1063/5.0086186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cubic half-metallic Heusler alloy Co2MnSi (CMS) thin films were epitaxially grown on Ge(111) substrates via a hexagonal graphene inter-layer through the combined use of magnetron sputtering for CMS and mechanical exfoliation for graphene. Despite the graphene interlayer being inserted between the CMS film and the Ge(111) substrate, CMS films were still grown epitaxially on Ge(111) substrates with extremely smooth and abrupt interfaces. Furthermore, 111 peaks of CMS were observed by x-ray diffraction measurement, indicating the L2(1) order for CMS thin films. The saturation magnetization (M-s) of CMS films annealed at 450 degrees C was 891 emu/cm(3) at 10 K, which is correspondence to 87% of the theoretically predicted saturation magnetization value for half-metallic CMS. Published under an exclusive license by AIP Publishing.

引用

页数：5

共 37 条

[1] Electrical injection of spin-polarized electrons and electrical detection of dynamic nuclear polarization using a Heusler alloy spin source [J].