Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap

被引：14

作者：

Rubio-Roy, Miguel ^{[1
]}

Zaman, Farhana ^{[2
]}

Hu, Yike ^{[1
]}

Berger, Claire ^{[1
]}

Moseley, Michael W. ^{[2
]}

Meindl, James D. ^{[2
]}

de Heer, Walt A. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期

基金：

美国国家科学基金会;

关键词：

ellipsometry; epitaxial growth; graphene; graphitisation; Hall mobility; Raman spectra; silicon compounds;

D O I：

10.1063/1.3334683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electronic quality epitaxial graphene has been selectively grown on silicon carbide capped with a patterned aluminum nitride layer, providing a pathway to produce device structures that avoid lithographic patterning of graphene itself. Patterning of the cap exposes SiC where graphene will grow. Capped areas inhibit graphene growth and withstand graphitization temperatures up to 1420 degrees C under 100 Pa of argon pressure. Graphene Hall bars were fabricated and characterized by scanning Raman spectroscopy, ellipsometry, and transport measurements. Hall-mobility is about 600 cm(2)/V s and can be further enhanced by fine tuning the argon pressure and improving the quality of SiC surface prior to graphitization.

引用

页数：3

共 13 条

[1] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[2] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[3] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[4] Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy [J].

Burnham, Shawn D. ;

Namkoong, Gon ;

Look, David C. ;

Clafin, Bruce ;

Doolittle, W. Alan .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (02)

[5] Selective epitaxial growth of graphene on SiC [J].

Camara, N. ;

Rius, G. ;

Huntzinger, J. -R. ;

Tiberj, A. ;

Mestres, N. ;

Godignon, P. ;

Camassel, J. .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[6] Effectiveness of AlN encapsulant in annealing ion-implanted SiC [J].

Handy, EM ;

Rao, MV ;

Jones, KA ;

Derenge, MA ;

Chi, PH ;

Vispute, RD ;

Venkatesan, T ;

Papanicolaou, NA ;

Mittereder, J .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :746-751

[7] Why multilayer graphene on 4H-SiC(000(1)over-bar) behaves like a single sheet of graphene [J].

Hass, J. ;

Varchon, F. ;

Millan-Otoya, J. E. ;

Sprinkle, M. ;

Sharma, N. ;

De Heer, W. A. ;

Berger, C. ;

First, P. N. ;

Magaud, L. ;

Conrad, E. H. .

PHYSICAL REVIEW LETTERS, 2008, 100 (12)

[8] The growth and morphology of epitaxial multilayer graphene [J].

Hass, J. ;

de Heer, W. A. ;

Conrad, E. H. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (32)

[9] Transport in chemically doped graphene in the presence of adsorbed molecules [J].

Hwang, E. H. ;

Adam, S. ;

Das Sarma, S. .

PHYSICAL REVIEW B, 2007, 76 (19)

[10] Atomic structure of graphene on SiO2 [J].

Ishigami, Masa ;

Chen, J. H. ;

Cullen, W. G. ;

Fuhrer, M. S. ;

Williams, E. D. .

NANO LETTERS, 2007, 7 (06) :1643-1648

← 1 2 →