Tunable metasurfaces open new doors for achieving dynamic wavefront manipulation in an ultracompact footprint. Dielectric metasurfaces are particularly attractive for this application due to their low-loss modes. However, their volumetric modes make theni difficult to dynamically tune compared to plasmonic variants with strong field confinement. We overcome this challenge by combining dielectric resonators with an epsilon-near-zero (ENZ) mode in a thin film. By tuning the coupling between modes in the resonators and the ENZ thin film, active control over the transmittance amplitude is achieved. Operating at the wavelength of the Huygens mode, we demonstrate transmittance modulation with an on-state transmittance of 70% and a modulation depth of 31%. In addition, we create a tunable diffraction grating and demonstrate its potential use in beam steering applications. This approach provides a new avenue for high-speed and low-power modulation of dielectric metasurfaces. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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KTH, Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, Sweden
Zhejiang Univ, Coll Opt Sci & Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Zhejiang, Peoples R ChinaKTH, Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, Sweden
Tian, Jingyi
Yang, Yuanqing
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Univ Southern Denmark, Ctr Nano Opt, Campusvej 55, DK-5230 Odense, DenmarkKTH, Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, Sweden
Yang, Yuanqing
Qiu, Min
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Zhejiang Univ, Coll Opt Sci & Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Zhejiang, Peoples R ChinaKTH, Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, Sweden
Qiu, Min
Laurell, Fredrik
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KTH, Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, SwedenKTH, Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, Sweden
Laurell, Fredrik
Pasiskevicius, Valdas
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KTH, Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, SwedenKTH, Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, Sweden
Pasiskevicius, Valdas
Jang, Hoon
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KTH, Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, SwedenKTH, Royal Inst Technol, Dept Appl Phys, S-10691 Stockholm, Sweden
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East China Normal Univ, Sch Phys & Elect Sci, Extreme Optoelectromechan Lab XXL, Shanghai 200241, Peoples R China
East China Normal Univ, Sch Phys & Elect Sci, State Key Lab Precis Spect, Shanghai 200241, Peoples R ChinaGuizhou Minzu Univ, Sch Phys & Mechatron Engn, Guiyang 550025, Peoples R China
Cheng, Ya
Li, Lin
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East China Normal Univ, Sch Phys & Elect Sci, State Key Lab Precis Spect, Shanghai 200241, Peoples R ChinaGuizhou Minzu Univ, Sch Phys & Mechatron Engn, Guiyang 550025, Peoples R China
Li, Lin
Zhou, Chaobiao
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Guizhou Minzu Univ, Sch Phys & Mechatron Engn, Guiyang 550025, Peoples R ChinaGuizhou Minzu Univ, Sch Phys & Mechatron Engn, Guiyang 550025, Peoples R China
Zhou, Chaobiao
Huang, Lujun
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East China Normal Univ, Sch Phys & Elect Sci, Extreme Optoelectromechan Lab XXL, Shanghai 200241, Peoples R ChinaGuizhou Minzu Univ, Sch Phys & Mechatron Engn, Guiyang 550025, Peoples R China
Huang, Lujun
Miroshnichenko, Andrey E.
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Univ New South Wales Canberra, Sch Engn & Informat Technol, Canberra, ACT 2610, AustraliaGuizhou Minzu Univ, Sch Phys & Mechatron Engn, Guiyang 550025, Peoples R China
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South China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China
Chen, Yanzhi
Mei, Jun
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South China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China