Phosphorus gettering in multicrystalline silicon studied by neutron activation analysis

被引：44

作者：

Macdonald, D ^{[1
]}

Cuevas, A ^{[1
]}

Kinomura, A ^{[1
]}

Nakano, Y ^{[1
]}

机构：

[1] Australian Natl Univ, Fac Engn & Informat Technol, Dept Engn, Canberra, ACT 0200, Australia

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190514

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Neutron Activation Analysis (NAA) is a powerful and sensitive technique for measuring trace amounts of impurities. In this work, we have applied NAA to the problem of identifying metallic impurities within the bulk of solar-grade cast multicrystalline silicon (mc-Si) wafers. In particular, the change in concentrations of these contaminants after phosphorus gettering is monitored, revealing a marked reduction in some metal species, but not in others.

引用

页码：285 / 288

页数：4

共 19 条

[11] Mechanisms of transition-metal gettering in silicon [J].

Myers, SM ;

Seibt, M ;

Schröter, W .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (07) :3795-3819

[12] Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications [J].

Plekhanov, PS ;

Gafiteanu, R ;

Gösele, UM ;

Tan, TY .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) :2453-2458

[13] Recombination activity of copper in silicon [J].

Sachdeva, R ;

Istratov, AA ;

Weber, ER .

APPLIED PHYSICS LETTERS, 2001, 79 (18) :2937-2939

[14] EFFECT OF ZINC IMPURITY ON SILICON SOLAR-CELL EFFICIENCY [J].

SAH, CT ;

CHAN, PCH ;

WANG, CK ;

SAH, RLY ;

YAMAKAWA, KA ;

LUTWACK, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) :304-313

[15]

SCHRODER DK, 1990, SEMICONDUCTOR MAT DE

[16] Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data [J].

Sinton, RA ;

Cuevas, A .

APPLIED PHYSICS LETTERS, 1996, 69 (17) :2510-2512

[17] DETERMINATION OF TRACE-ELEMENT IN A SILICON SINGLE-CRYSTAL [J].

TAKEUCHI, T ;

NAKANO, Y ;

FUKUDA, T ;

HIRAI, I ;

OSAWA, A ;

TOYOKURA, N .

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 1993, 168 (02) :367-376

[18] ELECTRON-CAPTURE AT THE 2 ACCEPTOR LEVELS OF A ZINC CENTER IN SILICON [J].

WANG, AC ;

LU, LS ;

SAH, CT .

PHYSICAL REVIEW B, 1984, 30 (10) :5896-5903

[19] A FAST, PREPARATION-FREE METHOD TO DETECT IRON IN SILICON [J].

ZOTH, G ;

BERGHOLZ, W .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) :6764-6771

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