Study of the dielectric function of ZnS by spectroscopic ellipsometry

被引：0
|
作者：
Ghong, TH [1 ]
Kim, TJ
Kim, YD
Kim, SJ
Aspnes, DE
Choi, YD
Yu, YM
机构：
[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27606 USA
[3] Mokwon Univ, Dept Phys, Taejon 302729, South Korea
[4] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷
关键词：
ellipsometry; ZnS; band gap;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the best room-temperature dielectric function data for zincblende-type, ZnS from :3.7 to 6.0 eV, obtained by spectroscopic ellipsometry together with real-time assessment of overlayer removal. These data were extended to 9.0 eV (without chemical etching) using a variable-angle system. This permit, the first detailed analysis of the E-2 band gap of ZnS, revealing 3 bandgaps in this spectral region.
引用
收藏
页码：S238 / S241
页数：4
相关论文
共 50 条
  • [1] Dielectric function of ZnTe nanocrystals by spectroscopic ellipsometry
    Ahmed, F.
    Naciri, A. En
    Grob, J. J.
    Stchakovsky, M.
    Johann, L.
    NANOTECHNOLOGY, 2009, 20 (30)
  • [2] EMPIRICAL DIELECTRIC FUNCTION OF AMORPHOUS MATERIALS FOR SPECTROSCOPIC ELLIPSOMETRY
    YAMAGUCHI, T
    KANEKO, Y
    JAYATISSA, AH
    AOYAMA, M
    ZOTOV, AV
    LIFSHITS, VG
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) : 4673 - 4676
  • [3] Empirical dielectric function of amorphous materials for spectroscopic ellipsometry
    Yamaguchi, T.
    Kaneko, Y.
    Jayatissa, A.H.
    Aoyama, M.
    Zotov, A.V.
    Lifshits, V.G.
    Journal of Applied Physics, 1995, 77 (09):
  • [4] Analysis of dielectric function of silicon films with spectroscopic ellipsometry
    Dept. of Optoelectronics, Chengdu University of Information Technology, Chengdu 610225, China
    Bandaoti Guangdian, 2008, 2 (226-230):
  • [5] Study on the dielectric function of the CdMgTe alloy by using vacuum ultraviolet spectroscopic ellipsometry
    Kim, T. J.
    Kim, Y. D.
    Kossut, J.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (03) : 1156 - 1159
  • [6] Spectroscopic ellipsometry study of the influence of indium ion implantation on dielectric function of GaAs
    Kulik, Miroslaw
    Rzodkiewicz, Witold
    Zuk, Jerzy
    Komarov, Fadei. F.
    PRZEGLAD ELEKTROTECHNICZNY, 2008, 84 (03): : 196 - 199
  • [7] Composition profiling of graded dielectric function materials by spectroscopic ellipsometry
    Trolier-McKinstry, S
    Koh, J
    THIN SOLID FILMS, 1998, 313 : 389 - 393
  • [8] Dielectric function and critical points of AlP determined by spectroscopic ellipsometry
    Hwang, S. Y.
    Kim, T. J.
    Jung, Y. W.
    Barange, N. S.
    Park, H. G.
    Kim, J. Y.
    Kang, Y. R.
    Kim, Y. D.
    Shin, S. H.
    Song, J. D.
    Liang, C. -T.
    Chang, Y. -C.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 587 : 361 - 364
  • [9] DIELECTRIC FUNCTION OF MONOCRYSTALLINE MOSI2 BY SPECTROSCOPIC ELLIPSOMETRY
    GED, P
    MADAR, R
    SENATEUR, JP
    PHYSICAL REVIEW B, 1984, 29 (12): : 6981 - 6984
  • [10] DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY
    ASPNES, DE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1057 - 1060
12345