Simulation of carrier transport and nonlinearities in quantum-well laser diodes

被引：162

作者：

Grupen, M

Hess, K

机构：

[1] Univ Illinois, Coordinated Sci Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Beckman Inst, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 01期

基金：

美国国家科学基金会;

关键词：

carrier capture; hot carriers; nonlinear gain; quantum-well laser diodes; spectral hole burning;

D O I：

10.1109/3.655016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The two-dimensional (2-D) quantum-well (QW) laser diode simulator Minilase-II is presented in detail, This simulator contains a complete treatment of carrier dynamics including bulk transport, quantum carrier capture, spectral hole burning, and quantum carrier heating, The models used in the simulator and their connectivity are first presented. Then the simulator is used to demonstrate the effects of various nonlinear processes occurring in QW lasers, Finally, modulation responses produced by Minilase-II are compared directly with experimental data, showing good quantitative agreement.

引用

页码：120 / 140

页数：21

共 65 条

[61] AUGER RECOMBINATION IN LONG-WAVELENGTH STRAINED-LAYER QUANTUM-WELL STRUCTURES [J].