ELLIPSOMETRY OF POROUS n-Si:(Ni, Co) STRUCTURES

被引：0

作者：

Treideris, M. ^{[1
]}

Simkiene, I. ^{[1
]}

Reza, A. ^{[1
]}

Babonas, J. ^{[1
]}

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2009年 / 49卷 / 04期

关键词：

porous n-Si; transition metal nanoparticles; null-ellipsometry; SILICON; NANOPARTICLES;

D O I：

10.3952/lithjphys.49406

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The composite samples of porous n-Si, which have been prepared by anodic etching and embedded with Ni and Co nanostructures by electroless process, were investigated by null-ellipsometry technique. The ellipsometric data were analysed in the multilayer model and the composition of porous layer on the substrate surface was determined. The null-ellipsometry technique was shown to be an efficient tool for nondestructive testing and characterization of porous it-Si samples with embedded transition metal structures.

引用

页码：439 / 444

页数：6

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