Physics based model for potential distribution and threshold voltage of gate-all-around tunnel field effect transistor (GAA-TFET)

被引：2

作者：

Usha, C. ^{[1
]}

Vimala, P. ^{[1
]}

Ramakrishnan, V. N. ^{[2
]}

机构：

[1] Dayananda Sagar Coll Engn, Dept Elect & Commun, Bangalore 560078, Karnataka, India

[2] Vellore Inst Technol, Dept Elect & Commun, Vellore 632014, Tamil Nadu, India

来源：

MATERIALS TODAY-PROCEEDINGS | 2021年 / 45卷

关键词：

Tunnel field effect transistor; Surface potential; Threshold voltage; Threshold voltage roll off; Drain current; TCAD Simulation; FET; DESIGN;

D O I：

10.1016/j.matpr.2020.10.946

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we propose physics based modeling for p-type surrounding gate TFET with single material gate. The surface potential is modeled from 2-D Poisson's equation using Parabolic Approximation method. From the surface potential equation threshold voltage, threshold voltage roll off, drain current and Subthreshold Swing is modeled. The simulation of the model provides the threshold of 0.4 V, threshold voltage roll off less than 0.1 and Subthreshold Swing of 41 mV/dec. The model is validated using ATLAS TCAD Simulation Tool. (C) 2019 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of the scientific committee of the 2nd International Conference on Nanoscience and Nanotechnology.

引用

页码：4052 / 4057

页数：6

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