On the Asymmetry of the DC and Low-Frequency Noise Characteristics of Vertical Nanowire pMOSFETs with Bulk Source Contact

被引：3
作者：
Simoen, Eddy [1 ]
Veloso, Anabela [1 ]
Matagne, Philippe [1 ]
机构：
[1] IMEC, UPM, Kapeldreef 75, B-3001 Leuven, Belgium
来源：
2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2021年
关键词：
vertical nanowires; gate-all-around; low-frequency noise; forward and reverse operation; JUNCTIONLESS;
D O I：
10.1109/EuroSOI-ULIS53016.2021.9560186
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the impact of switching the source and drain on the low-frequency noise of Gate-All-Around (GAA) Vertical Nanowire (VNW) pMOSFETs with a bulk silicon source contact is investigated. As shown, significantly lower 1/f noise is observed in reverse operation compared with the normal forward configuration. Considering the mobility fluctuations origin of the 1/f noise, this indicates a pronounced impact of the choice of the source/drain contact on the conduction in the silicon nanowire. On the other hand, little effect has been found from the doping density in the NWs.
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页数：4
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