Assessment of the hazard level (depth) of flaws using a B(sic)-12HΦM eddy current flaw detector

被引：0

作者：

Bizyulev, AN ^{[1
]}

Muzhitskii, VF ^{[1
]}

机构：

[1] Sci Res Inst Introscopy, ZAO Spektr, Moscow 119048, Russia

来源：

RUSSIAN JOURNAL OF NONDESTRUCTIVE TESTING | 2004年 / 40卷 / 03期

关键词：

Material Processing; Distinctive Feature; Flaw Detector; Eddy Current; Technical Characteristic;

D O I：

10.1023/B:RUNT.0000040180.60123.45

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The operation features and the main technical characteristics of the Bd-12HPhiM eddy current flaw detector are considered. A method is proposed for testing complex-shaped parts with the use of holding attachments and a specialized transducer with a slanted sensitive element. The capabilities of the device in assessing the hazard level (depth) of a flaw are shown. The distinctive features of the Bd-12HPhiPi eddy current flaw detector are presented.

引用

页码：211 / 214

页数：4

共 4 条

[1] Assessment of the Hazard Level (Depth) of Flaws Using a ВД-12НФМ Eddy Current Flaw Detector
A. N. Bizyulev
V. F. Muzhitskii
Russian Journal of Nondestructive Testing, 2004, 40 : 211 - 214
[2] Portable BΔ-12HΦM and BΔ-12HΦΠ eddy-current flaw detectors
V. F. Muzhitskii
A. G. Efimov
A. E. Shubochkin
A. M. Sysoev
Russian Journal of Nondestructive Testing, 2007, 43 : 700 - 707
[3] The B(d)-12HΦΠ eddy-current flaw detector and methods for processing a measured signal produced by a flaw
Bizyulev, AN
Muzhitskii, VF
Zagidulin, RV
Efimov, AG
Sysoev, AM
RUSSIAN JOURNAL OF NONDESTRUCTIVE TESTING, 2004, 40 (05) : 350 - 355
[4] A high voltage (1,750V) and high current gain (β=24.8) 4H-SiC bipolar junction transistor using a thin (12 μm) drift layer
Zhao, JH
Zhang, J
Alexandrov, P
Li, X
Burke, T
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1173 - 1176

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