Strain relaxation in InxGa1-xN epitaxial films grown coherently on GaN

被引：4
|
作者：
Park, SE
O, B [1 ]
Lee, CR
机构：
[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[2] Chonbuk Natl Univ, Coll Engn, RIAMD, Sch Adv Mat Engn, Chonju 561756, South Korea
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 249卷 / 3-4期
关键词：
high resolution X-ray diffraction; stresses; X-ray topography; metalorganic chemical vapor deposition; semiconducting III-V materials;
D O I：
10.1016/S0022-0248(02)02244-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The strain relaxation was investigated in InxGa1-xN films grown pseudomorphically on GaN buffer layer. The shift of dominant peaks originated from In0.035Ga0.965N films which were thinner than the critical thickness was observed with the increasing film thickness. Considering the same thermal strains in all the samples, this is attributed to the relaxation of the in-plane strains that resulted from the increased common in-plane lattice constant of coherently grown-In0.035Ga0.965N films with the increasing thickness. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：455 / 460
页数：6
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