Surrounding Channel Nanowire Tunnel Field-Effect Transistor with Dual Gate to Reduce a Hump Phenomenon

被引：4

作者：

Kwon, Ye Sung ^{[1
]}

Lee, Seong-Hyun ^{[1
]}

Kim, Yoon ^{[2
]}

Kim, Garam ^{[3
]}

Kim, Jang Hyun ^{[4
]}

Kim, Sangwan ^{[1
]}

机构：

[1] Ajou Univ, Dept Elect & Comp Engn, Suwon 16499, South Korea

[2] Univ Seoul, Sch Elect & Comp Engn, Seoul 02504, South Korea

[3] Myongji Univ, Dept Elect Engn, Yongin 17058, South Korea

[4] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2020年 / 20卷 / 07期

关键词：

CMOS; TFET; Hump; GAA; Ambipolar; Hetero-Junction; WORK-FUNCTION; TFET; FET;

D O I：

10.1166/jnn.2020.17793

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The tunnel field-effect transistor (TFET) with surrounding channel nanowire (SCNW) structure promises better performance than the conventional planar TFET in terms of subthreshold swing (SS) and on-current (I-ON). In spite of the advantages of SCNW TFET, there are some technical issues in the aspects of a hump phenomenon in subthreshold region and a high ambipolar current (I-AMB) in off-state. In order to overcome these issues, a novel dual-gate SCNW TFET (DG-SCNW TFET) with differential gate work functions (WFs) and a gate-drain underlap is proposed and studied by using technology computer-aided design (TCAD) simulation. In addition, a hetero-junction with SiGe source is applied to improve the device performance. Finally, it is confirmed that the optimized DG-SCNW TFET shows the remarkable performance comparing with the control device.

引用

页码：4182 / 4187

页数：6

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