Quenching of excitons in doped disordered organic semiconductors -: art. no. 205205

Models of exciton quenching at charge-transfer centers and by Forster energy transfer in disordered organic materials are formulated. The models consider quenching as a diffusion-limited process with the exciton diffusion rate being controlled by energy relaxation of excitons within the inhomogeneously broadened intrinsic excitonic density of states. The calculated dependences of the radiative exciton decay rate upon the density of dopants are used in order to fit experimental data on the Forster-type fluorescence quenching in poly(phenylphenylene vinylene) and photoluminescence quenching at charge-transfer centers in an alkoxy-substituted poly-phenylenevinylene.