Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3-SrTiO3 interfaces

被引：20

作者：

Jany, R. ^{[1
]}

Breitschaft, M. ^{[1
]}

Hammerl, G. ^{[1
]}

Horsche, A. ^{[1
]}

Richter, C. ^{[1
]}

Paetel, S. ^{[1
]}

Mannhart, J. ^{[1
]}

Stucki, N. ^{[2
]}

Reyren, N. ^{[2
]}

Gariglio, S. ^{[2
]}

Zubko, P. ^{[2
]}

Caviglia, A. D. ^{[2
]}

Triscone, J. -M. ^{[2
]}

机构：

[1] Univ Augsburg, Inst Phys, Ctr Elect Correlat & Magnetism, D-86135 Augsburg, Germany

[2] Univ Geneva, DPMC, CH-1211 Geneva 4, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 18期

关键词：

The authors gratefully acknowledge helpful discussions with T. Kopp; Y; C; Liao; and M. Gleyzes. This work was supported by the DFG (Grant No. TRR 80); EC; (OxIDes; Grant No. 228989); and by the Swiss National Sciences Foundation through the NCCR MaNEP and Division II;

D O I：

10.1063/1.3428433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO3-SrTiO3 interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428433]

引用

页数：3

共 9 条

[1] Two-dimensional electron liquid state at LaAlO3-SrTiO3 interfaces [J].

Breitschaft, M. ;

Tinkl, V. ;

Pavlenko, N. ;

Paetel, S. ;

Richter, C. ;

Kirtley, J. R. ;

Liao, Y. C. ;

Hammerl, G. ;

Eyert, V. ;

Kopp, T. ;

Mannhart, J. .

PHYSICAL REVIEW B, 2010, 81 (15)

[2] Electric field control of the LaAlO3/SrTiO3 interface ground state [J].

Caviglia, A. D. ;

Gariglio, S. ;

Reyren, N. ;

Jaccard, D. ;

Schneider, T. ;

Gabay, M. ;

Thiel, S. ;

Hammerl, G. ;

Mannhart, J. ;

Triscone, J. -M. .

NATURE, 2008, 456 (7222) :624-627

[3] ATOMIC CONTROL OF THE SRTIO3 CRYSTAL-SURFACE [J].

KAWASAKI, M ;

TAKAHASHI, K ;

MAEDA, T ;

TSUCHIYA, R ;

SHINOHARA, M ;

ISHIYAMA, O ;

YONEZAWA, T ;

YOSHIMOTO, M ;

KOINUMA, H .

SCIENCE, 1994, 266 (5190) :1540-1542

[4] Calculation of the capacitances of conductors: Perspectives for the optimization of electronic devices [J].

Kopp, Thilo ;

Mannhart, Jochen .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)

[5] Quasi-ideal strontium titanate crystal surfaces through formation of strontium hydroxide [J].

Koster, G ;

Kropman, BL ;

Rijnders, GJHM ;

Blank, DHA ;

Rogalla, H .

APPLIED PHYSICS LETTERS, 1998, 73 (20) :2920-2922

[6] A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface [J].

Ohtomo, A ;

Hwang, HY .

NATURE, 2004, 427 (6973) :423-426

[7] Microlithography of electron gases formed at interfaces in oxide heterostructures [J].

Schneider, C. W. ;

Thiel, S. ;

Hammerl, G. ;

Richter, C. ;

Mannhart, J. .

APPLIED PHYSICS LETTERS, 2006, 89 (12)

[8] Origin of the dielectric dead layer in nanoscale capacitors [J].

Stengel, Massimiliano ;

Spaldin, Nicola A. .

NATURE, 2006, 443 (7112) :679-682

[9] Tunable quasi-two-dimensional electron gases in oxide heterostructures [J].

Thiel, S. ;

Hammerl, G. ;

Schmehl, A. ;

Schneider, C. W. ;

Mannhart, J. .

SCIENCE, 2006, 313 (5795) :1942-1945

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