Chiral electronic excitations in the quasi-two-dimensional Rashba system BiTeI

被引:0
作者
Lee, C. [1 ]
Peng, B. [2 ]
Du, K. [1 ,3 ]
Kung, H. -H. [1 ]
Monserrat, B. [2 ]
Cheong, S. W. [1 ,3 ,4 ,5 ]
Won, C. J. [4 ,5 ]
Blumberg, G. [1 ,6 ]
机构
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[2] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England
[3] Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA
[4] Pohang Univ Sci & Technol, Lab Pohang Emergent Mat, Dept Phys, Pohang 37673, South Korea
[5] Pohang Univ Sci & Technol, Max Planck POSTECH Ctr Complex Phase Mat, Dept Phys, Pohang 37673, South Korea
[6] NICPB, EE-12618 Tallinn, Estonia
基金
英国工程与自然科学研究理事会; 新加坡国家研究基金会; 欧洲研究理事会;
关键词
RAMAN-SCATTERING; PHASE;
D O I
10.1103/PhysRevB.105.L161105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical transitions between spin-polarized bands of the quasi-two-dimensional Rashba system BiTeI are investigated using polarization-resolved resonant Raman spectroscopy. We detect chiral excitations between states with opposite helicity and compare spectra to calculations within a three-band model. Using the resonant Raman excitation profile, we deduce the Rashba parameters and band gaps of the higher conduction bands near the Fermi level, and compare the parameters to values obtained by ab initio density functional theory.
引用
收藏
页数:6
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