Biosensing characteristics of InAs nanowire transistors grown by MOCVD

被引：1

作者：

Kim, Doo Gun ^{[1
]}

Hwang, Jeongwoo ^{[1
]}

Kim, Seon Hoon ^{[1
]}

Ki, Hyun Chul ^{[1
]}

Kim, Tae Un ^{[1
]}

Shin, Jae Cheol ^{[2
]}

Choi, Young Wan ^{[3
]}

机构：

[1] Korea Photon Technol Inst, Laser Res Ctr, Gwangju 61007, South Korea

[2] Yeungnam Univ, Dept Phys, 280 Daehak Ro, Gyongsan 38541, Gyeongbuk, South Korea

[3] Chung Ang Univ, Sch Elect & Elect Engn, 84 Heukseok Ro, Seoul 06974, South Korea

来源：

QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XIV | 2017年 / 10114卷

关键词：

Nanowires; Field effect transistor; MOCVD; Biosensor; InAs; SILICON;

D O I：

10.1117/12.2253637

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrated the ion-sensitive field-effect transistors (IS-FETs) based on nanowires (NWs) with different diameters and doping concentrations to obtain the high sensitivity and various applications. The growth of the catalyst-free InAs NWs was carried out using a horizontal reactor MOCVD system (AIXTRON Inc.). A p-type Si (111) wafer (rho = 1 - 10 Omega-cm) was prepared for the NW growth. Here, NWs with diameters of around 50 similar to 150 nm were grown and the doping concentration also was changed around x +/- 10(16 similar to 18)/cm(2). IS-FETs with the grown InAs NWs were fabricated using the photolithography and the lift-off process. The gas sensing characteristics have been investigated through studying the gate response of the NW conductance in different ambient conditions.

引用

页数：7

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