Spatially Dependent Lattice Deformations for Dislocations at the Edges of Graphene

被引：10
作者：
Gong, Chuncheng [1 ]
He, Kuang [1 ]
Robertson, Alex W. [1 ]
Yoon, Euijoon [2 ]
Lee, Gun-Do [2 ]
Warner, Jamie H. [1 ]
机构：
[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea
来源：
ACS NANO | 2015年 / 9卷 / 01期
基金：
英国工程与自然科学研究理事会; 新加坡国家研究基金会;
关键词：
graphene; ripples; dislocations; defects; TEM; CRYSTALS;
D O I：
10.1021/nn505996c
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We show that dislocations located at the edge of graphene cause different lattice deformations to those located in the bulk lattice. When a dislocation is located near an edge, a decrease in the rippling and increase of the in-plane rotation occurs relative to the dislocations in the bulk. The increased in-plane rotation near the edge causes bond rotations at the edge of graphene to reduce the overall strain in the system. Dislocations were highly stable and remained fixed in their position even when located within a few lattice spacings from the edge of graphene. We study this behavior at the atomic level using aberration-corrected transmission electron microscopy. These results show detailed information about the behavior of dislocations in 2D materials and the strain properties that result.
引用
收藏
页码：656 / 662
页数：7
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