Temperature independent current biasing employing TFET

被引：3

作者：

Guo, P. F. ^{[1
]}

Yang, Y. ^{[1
]}

Samudra, G. ^{[1
]}

Heng, C. H. ^{[1
]}

Yeo, Y. C. ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 11期

关键词：

Tunnel field effect transistors - Temperature;

D O I：

10.1049/el.2010.1064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A recent study to a tunnelling field-effect transistor (TFET) reveals interesting temperature behaviour. It is found that the TFET drain current temperature coefficient varies with the applied drain and gate voltage. Explored is a circuit which exploits this unique behaviour of the TFET to achieve temperature independent current biasing. © 2010 The Institution of Engineering and Technology.

引用

页码：786 / U81

页数：2

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