Lateral current injection photonic crystal membrane light emitting diodes

被引：12
作者：
Long, Christopher M. [1 ]
Giannopoulos, Antonios V. [1 ]
Choquette, Kent D. [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 02期
基金：
美国国家科学基金会;
关键词：
gallium arsenide; gallium compounds; indium compounds; light emitting diodes; optical fabrication; photonic crystals; p-n junctions; LASERS; INP;
D O I：
10.1116/1.3360891
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel method for fabricating photonic crystal membrane light emitting diodes is presented. The device employs a transverse diode structure and injects carriers laterally through a photonic crystal patterned at the p-n junction within a membrane. Details of the fabrication process as well as electrical and optical characteristics of the devices are presented.
引用
收藏
页码：359 / 364
页数：6
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