The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy

被引：0
|
作者：
Lundin, W. V. [1 ]
Zavarin, E. E. [1 ]
Brunkov, P. N. [1 ]
Yagovkina, M. A. [1 ]
Troshkov, S. I. [1 ]
Sakharov, A. V. [1 ]
Nikolaev, A. E. [1 ]
Tsatsulnikov, A. F. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
PLANETARY REACTOR; ALN; SAPPHIRE; MOVPE;
D O I：
10.1134/S1063785016040192
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the influence of technological parameters on the surface morphology and development of mechanical stresses in Al(Ga)N layers during their growth by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates. Minimization of tensile stresses under conditions of a retained atomically smooth surface can be achieved by using a combination of factors including (i) nitridation of substrate in ammonia flow, (ii) formation of two-layer AlN-Al(Ga)N structures by introducing a small amount (several percent) of Ga after growth of a thin AlN layer, and (iii) reduction of ammonia flow during growth of an Al(Ga)N layer.
引用
收藏
页码：431 / 434
页数：4
相关论文
共 50 条
  • [41] Metalorganic Vapor Phase Epitaxy of Thick and Uniform Single Crystal CdTe Epitaxial Layers on (211) Si Substrates for X-ray Imaging Detector Development
    M. Niraula
    K. Yasuda
    R. Torii
    R. Tamura
    Y. Higashira
    Y. Agata
    Journal of Electronic Materials, 2019, 48 : 7680 - 7685
  • [42] Metalorganic Vapor Phase Epitaxy of Thick and Uniform Single Crystal CdTe Epitaxial Layers on (211) Si Substrates for X-ray Imaging Detector Development
    Niraula, M.
    Yasuda, K.
    Torii, R.
    Tamura, R.
    Higashira, Y.
    Agata, Y.
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (12) : 7680 - 7685
  • [43] Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy
    Ranga, Praneeth
    Rishinaramangalam, Ashwin
    Varley, Joel
    Bhattacharyya, Arkka
    Feezell, Daniel
    Krishnamoorthy, Sriram
    APPLIED PHYSICS EXPRESS, 2019, 12 (11)
  • [44] A systematic study of Ga- and N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxy
    Blumberg, Christian
    Haeuser, Patrick
    Wefers, Fabian
    Jansen, Dennis
    Tegude, Franz-Josef
    Weimann, Nils
    Prost, Werner
    CRYSTENGCOMM, 2020, 22 (33) : 5522 - 5532
  • [45] Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Influence of the gas phase N/Al ratio and low temperature protective layer
    Boichot, R.
    Coudurier, N.
    Mercier, F.
    Lay, S.
    Crisci, A.
    Coindeau, S.
    Claudel, A.
    Blanquet, E.
    Pons, M.
    SURFACE & COATINGS TECHNOLOGY, 2013, 237 : 118 - 125
  • [46] Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
    Fiedler, A.
    Schewski, R.
    Baldini, M.
    Galazka, Z.
    Wagner, G.
    Albrecht, M.
    Irmscher, K.
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (16)
  • [47] Thermal stability of low-temperature GaN and AlN buffer layers during metalorganic vapor phase epitaxy monitored by in situ shallow angle reflectance using ultraviolet light
    Kobayashi, Y
    Akasaka, T
    Kobayashi, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (10B): : L1208 - L1210
  • [48] Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)
    Claudel, A.
    Blanquet, E.
    Chaussende, D.
    Pique, D.
    Pons, M.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 987 - 990
  • [49] Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy
    Nakano, Takayuki
    Shioda, Tomonari
    Sugiyama, Masakazu
    Nakano, Yoshiaki
    Shimogaki, Yukihiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (01)
  • [50] Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
    Ranga, Praneeth
    Bhattacharyya, Arkka
    Rishinaramangalam, Ashwin
    Ooi, Yu Kee
    Scarpulla, Michael A.
    Feezell, Daniel
    Krishnamoorthy, Sriram
    APPLIED PHYSICS EXPRESS, 2020, 13 (04)
12345