The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy

被引：0
|
作者：
Lundin, W. V. [1 ]
Zavarin, E. E. [1 ]
Brunkov, P. N. [1 ]
Yagovkina, M. A. [1 ]
Troshkov, S. I. [1 ]
Sakharov, A. V. [1 ]
Nikolaev, A. E. [1 ]
Tsatsulnikov, A. F. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
PLANETARY REACTOR; ALN; SAPPHIRE; MOVPE;
D O I：
10.1134/S1063785016040192
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the influence of technological parameters on the surface morphology and development of mechanical stresses in Al(Ga)N layers during their growth by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates. Minimization of tensile stresses under conditions of a retained atomically smooth surface can be achieved by using a combination of factors including (i) nitridation of substrate in ammonia flow, (ii) formation of two-layer AlN-Al(Ga)N structures by introducing a small amount (several percent) of Ga after growth of a thin AlN layer, and (iii) reduction of ammonia flow during growth of an Al(Ga)N layer.
引用
收藏
页码：431 / 434
页数：4
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