Metastable adsorption of benzene on the Si(001) surface

被引：74

作者：

Borovsky, B ^{[1
]}

Krueger, M ^{[1
]}

Ganz, E ^{[1
]}

机构：

[1] Univ Minnesota, Dept Phys, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.57.R4269

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the adsorption of benzene on the Si(001) surface using scanning tunneling microscopy. The central result is that benzene initially adsorbs in a metastable state and then converts to a lower-energy final state. The conversion to the final state occurs rather slowly at room temperature, with a time constant of 19 min, implying an activation energy barrier of about 1.0 eV, We study in detail the appearance of each state and its position relative to the underlying surface dimers in order to make a correspondence to existing proposed models for the structure of benzene adsorbed on Si(001). We measure a lower bound on the energy difference between the two states of 0.14 eV. [S0163-1829(98)50808-9].

引用

页码：R4269 / R4272

页数：4

共 9 条

[1] Dynamics and nucleation of Si Ad-dimers on the Si(100) surface [J].