Peculiarities of Al magic cluster self-assembly on Si(100) surface

被引:0
|
作者
Kotlyar, V. G. [1 ]
Luniakov, Yu. V. [1 ]
Zotov, A. V. [1 ,2 ,3 ]
Saranin, A. A. [1 ,2 ]
机构
[1] Inst Automat & Control Proc, Vladivostok 690041, Russia
[2] Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia
[3] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, Russia
基金
俄罗斯基础研究基金会;
关键词
Atom-solid interactions; Silicon; Indium; Aluminum; Surface structure; morphology; roughness and topography; Scanning tunneling microscopy (STM); Density functional calculations; TOTAL-ENERGY CALCULATIONS; INITIO MOLECULAR-DYNAMICS; WAVE BASIS-SET; HIGH-TEMPERATURE; 1ST PRINCIPLES; SI(001) SURFACE; METALS; RECONSTRUCTION; ADSORPTION; GAS;
D O I
10.1016/j.susc.2010.01.014
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using scanning tunneling microscopy observations and density functional theory calculations, regularities of the Al magic cluster array self-assembly on Si(100) surface has been elucidated. While a single Al cluster occupies an area of 4a x 3a, an ordered Al-cluster array exhibits a 4 x 5 periodicity, as the clusters in the array are separated by the 4a x 2a "spacers". The plausible structural model for the "spacer" was proposed in which the "spacer" is arranged as an ordinary 4a x 3a-Al cluster in which the central atomic row with the topmost Si atom is missing. Appearance of the "spacers" in the Al-cluster array was found to reduce formation energy of the array. Ability to incorporate the rows of Al-"spacers" into the completed 4 x 3 In-cluster array was demonstrated. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:674 / 678
页数:5
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