Peculiarities of Al magic cluster self-assembly on Si(100) surface

被引：0

作者：

Kotlyar, V. G. ^{[1
]}

Luniakov, Yu. V. ^{[1
]}

Zotov, A. V. ^{[1
,2
,3
]}

Saranin, A. A. ^{[1
,2
]}

机构：

[1] Inst Automat & Control Proc, Vladivostok 690041, Russia

[2] Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia

[3] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, Russia

来源：

SURFACE SCIENCE | 2010年 / 604卷 / 7-8期

基金：

俄罗斯基础研究基金会;

关键词：

Atom-solid interactions; Silicon; Indium; Aluminum; Surface structure; morphology; roughness and topography; Scanning tunneling microscopy (STM); Density functional calculations; TOTAL-ENERGY CALCULATIONS; INITIO MOLECULAR-DYNAMICS; WAVE BASIS-SET; HIGH-TEMPERATURE; 1ST PRINCIPLES; SI(001) SURFACE; METALS; RECONSTRUCTION; ADSORPTION; GAS;

D O I：

10.1016/j.susc.2010.01.014

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using scanning tunneling microscopy observations and density functional theory calculations, regularities of the Al magic cluster array self-assembly on Si(100) surface has been elucidated. While a single Al cluster occupies an area of 4a x 3a, an ordered Al-cluster array exhibits a 4 x 5 periodicity, as the clusters in the array are separated by the 4a x 2a "spacers". The plausible structural model for the "spacer" was proposed in which the "spacer" is arranged as an ordinary 4a x 3a-Al cluster in which the central atomic row with the topmost Si atom is missing. Appearance of the "spacers" in the Al-cluster array was found to reduce formation energy of the array. Ability to incorporate the rows of Al-"spacers" into the completed 4 x 3 In-cluster array was demonstrated. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：674 / 678

页数：5

共 38 条

[1] Electronic states of two-dimensional adatom gas and nanocluster array: Na on Si(111)7x7
Ahn, JR
Yoo, K
Seo, JT
Byun, JH
Yeom, HW
[J]. PHYSICAL REVIEW B, 2005, 72 (11)
[2] Structure determination of the indium induced Si(001)-(4X3) reconstruction by surface X-ray diffraction and scanning tunneling microscopy
Bunk, O
Falkenberg, G
Seehofer, L
Zeysing, JH
Johnson, RL
Nielsen, M
Feidenhans'l, R
Landemark, E
[J]. APPLIED SURFACE SCIENCE, 1998, 123 : 104 - 110
[3] Photoemission and STM study of an In nanocluster array on the Si(111)-7x7 surface
Byun, J. H.
Ahn, J. R.
Choi, W. H.
Kang, P. G.
Yeom, H. W.
[J]. PHYSICAL REVIEW B, 2008, 78 (20)
[4] Formation and electronic states of In nanoclusters on the Si(111)-7X7 surface
Byun, Jung Hoon
Shin, Jin Sung
Kang, Pil Gyu
Jeong, Hojin
Yeom, Han Woong
[J]. PHYSICAL REVIEW B, 2009, 79 (23)
[5] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
CEPERLEY, DM
ALDER, BJ
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569
[6] First principles total energy calculations of the Al induced Si(001)-(3 x 4) reconstruction
Cocoletzi, GH
Takeuchi, N
[J]. SURFACE SCIENCE, 2002, 504 (1-3) : 101 - 107
[7] First principles calculations of the adsorption of group III metals on Si(001) at high temperature
Cotzomi-Paleta, J
Cocoletzi, GH
Takeuchi, N
[J]. SURFACE REVIEW AND LETTERS, 2002, 9 (5-6) : 1641 - 1644
[8] Relative stabilities of adsorbed versus substitutional Al atoms in submonolayer Al/SixGe1-x(111)
Gruznev, D. V.
Olyanich, D. A.
Chubenko, D. N.
Luniakov, Yu. V.
Kuyanov, I. A.
Zotov, A. V.
Saranin, A. A.
[J]. PHYSICAL REVIEW B, 2008, 78 (16):
[9] How to fabricate a defect free Si(001) surface
Hata, K
Kimura, T
Ozawa, S
Shigekawa, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (04): : 1933 - 1936
[10] Vibrational properties of Na nanoclusters self-assembled on Si(111) surface
Hwang, C. G.
Kim, N. D.
Shin, S. Y.
Chung, J. W.
Nam, J. H.
Kim, M. K.
Park, C. -Y.
Ahn, J. R.
[J]. SURFACE SCIENCE, 2008, 602 (13) : 2300 - 2304

← 1 2 3 4 →