Ge-on-Si camera for NIR detection

被引：0
|
作者：
Oehme, Michael [1 ]
Kaschel, Mathias [2 ]
Wanitzek, Maurice [1 ]
Epple, Steffen [2 ]
Zhou, Xin [1 ]
Yu, Zili [2 ]
Schwarz, Daniel [1 ]
Burghartz, Joachim N. [2 ]
Schulze, Joerg [1 ]
机构：
[1] Univ Stuttgart, Inst Semicond Engn, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
[2] Inst Mikroelektron Stuttgart IMS CHIPS, Allmandring 30a, D-70569 Stuttgart, Germany
来源：
2021 IEEE 17TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2021) | 2021年
关键词：
Detectors; Germanium; Infrared sensors; Silicon; Silicon photonics;
D O I：
10.1109/GFP51802.2021.9673939
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ge-on-Si camera for NIR detection with backside illumination, is presented. A 10x10 pixel array is controlled with a readout chip and a microcontroller, which is connected via USB. A linear behavior between digital output and optical power over a large dynamic range is shown.
引用
收藏
页数：2
相关论文
共 50 条
  • [31] Effectiveness of SiGe buffer layers in reducing dark currents of Ge-on-Si photodetectors
    Huang, Zhihong
    Oh, Jungwoo
    Banerjee, Sanjay K.
    Campbell, Joe C.
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (3-4) : 238 - 242
  • [32] Ge-on-Si photodiode with black silicon boosted responsivity
    Steglich, M.
    Oehme, M.
    Kaesebier, T.
    Zilk, M.
    Kostecki, K.
    Kley, E. -B.
    Schulze, J.
    Tuennermann, A.
    APPLIED PHYSICS LETTERS, 2015, 107 (05)
  • [33] Ge-on-Si Mid-Infrared Waveguide Platform for Molecular Fingerprint Sensing
    Gallacher, Kevin
    Millar, Ross W.
    Griskeviciute, Ugne
    Sinclair, Martin
    Sorel, Marc
    Baldassarre, Leonetta
    Ortolani, Michele
    Soref, Richard
    Paul, Douglas J.
    2020 22ND INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON 2020), 2020,
  • [34] Simulation of photonic crystal enhanced Ge-on-Si single photon avalanche diodes
    Smith, Charlie K.
    Mccarthy, Charlie
    Millar, Ross W.
    OPTICS EXPRESS, 2024, 32 (22): : 38805 - 38818
  • [35] Infrared absorption of n-type tensile-strained Ge-on-Si
    Wang, Xiaoxin
    Li, Haofeng
    Camacho-Aguilera, Rodolfo
    Cai, Yan
    Kimerling, Lionel C.
    Michel, Jurgen
    Liu, Jifeng
    OPTICS LETTERS, 2013, 38 (05) : 652 - 654
  • [36] Enhancing the photoluminescence response of thick Ge-on-Si layers using photonic crystals
    Yurasov, D., V
    Yablonskiy, A. N.
    Baidakova, N. A.
    Shaleev, M., V
    Rodyakina, E. E.
    Dyakov, S. A.
    Novikov, A., V
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (07)
  • [37] Effects of post annealing on in-situ n-doped Ge-on-Si
    Kumazawa, Yuta
    Xu, Xuejun
    Maruizumi, Takuya
    Sawano, Kentarou
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (12)
  • [38] Understanding the sidewall dependence of loss for Ge-on-Si waveguides in the mid-infrared
    Griskeviciute, Ugne
    Gallacher, Kevin
    Millar, Ross W.
    Paul, Douglas J.
    MacGilp, Iain
    2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019), 2019,
  • [39] High-efficiency Ge-on-Si SPADs for short-wave infrared
    Dumas, Derek C. S.
    Kirdoda, Jaros Law
    Millar, Ross W.
    Vines, Peter
    Kuzmenko, Kateryna
    Buller, Gerald S.
    Paul, Douglas J.
    OPTICAL COMPONENTS AND MATERIALS XVI, 2019, 10914
  • [40] Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation
    Zhang, Ying-Ying
    Choi, Chel-Jong
    Oh, Jungwoo
    Han, In-Shik
    Li, Shi-Guang
    Park, Kee-Young
    Shin, Hong-Sik
    Lee, Ga-Won
    Wang, Jin-Suk
    Majhi, Prashant
    Jammy, Raj
    Lee, Hi-Deok
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (11) : H402 - H404
12345