Ge-on-Si camera for NIR detection

被引：0
|
作者：
Oehme, Michael [1 ]
Kaschel, Mathias [2 ]
Wanitzek, Maurice [1 ]
Epple, Steffen [2 ]
Zhou, Xin [1 ]
Yu, Zili [2 ]
Schwarz, Daniel [1 ]
Burghartz, Joachim N. [2 ]
Schulze, Joerg [1 ]
机构：
[1] Univ Stuttgart, Inst Semicond Engn, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
[2] Inst Mikroelektron Stuttgart IMS CHIPS, Allmandring 30a, D-70569 Stuttgart, Germany
来源：
2021 IEEE 17TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2021) | 2021年
关键词：
Detectors; Germanium; Infrared sensors; Silicon; Silicon photonics;
D O I：
10.1109/GFP51802.2021.9673939
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ge-on-Si camera for NIR detection with backside illumination, is presented. A 10x10 pixel array is controlled with a readout chip and a microcontroller, which is connected via USB. A linear behavior between digital output and optical power over a large dynamic range is shown.
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页数：2
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