Room temperature growth of nanocrystalline anatase TiO2 thin films by dc magnetron sputtering

被引:81
作者
Singh, Preetam [1 ]
Kaur, Davinder
机构
[1] Indian Inst Technol, Dept Phys, Funct Nanomat Res Lab, Roorkee 247667, Uttar Pradesh, India
关键词
TiO2; Nanocrystalline; Oxygen pressure; DC magnetron sputtering; Room temperature; OPTICAL-PROPERTIES; DEPOSITION; PRESSURE; OXIDE; MECHANISM; DIAMOND;
D O I
10.1016/j.physb.2009.11.061
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report, the structural and optical properties of nanocrystalline anatase TiO2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO2 films for device applications with different refractive index, by changing the deposition parameters. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1258 / 1266
页数:9
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